Description

The IRG4PC30WPBF is an Insulated Gate Bipolar Transistor (IGBT). An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Features

● 50％ reduction of Eoff parameter

● Low IGBT conduction losses

● Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

● Lead-Free

● Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

● Industry-benchmark switching losses improve efficienty of all power supply topologies

Applications

● Switched-mode power supplies

● Traction motor control

● Induction heating

● AC and DC motor drives

● Solar inverters