IRGP50B60PDPBF

new-10%

Manufacturer part number:IRGP50B60PDPBF

Manufacturer:Infineon Technologies

Description:IRGP50B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP50B60PDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	370W
Current Rating	75A
Number of Elements	1
Element Configuration	Single
Power Dissipation	370W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	33 ns
Transistor Application	POWER CONTROL
Rise Time	26ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	140 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	50 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Turn On Time	59 ns
Test Condition	390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 50A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	75A
Turn Off Time-Nom (toff)	190 ns
IGBT Type	NPT
Gate Charge	240nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	34ns/130ns
Switching Energy	360μJ (on), 380μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	65ns
Height	24.99mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free