IXTA3N100D2HV

new-10%

Manufacturer part number:IXTA3N100D2HV

Manufacturer:IXYS

Description:MOSFET N-CH

Case Package:SOT-23

Datasheet:IXTA3N100D2HV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	2
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 1.5A, 0V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Tj
Gate Charge (Qg) (Max) @ Vgs	37.5nC @ 5V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	0V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	6Ohm
FET Feature	Depletion Mode
RoHS Status	RoHS Compliant