IXTA3N120 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.1kV. And this device has 1.1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 32 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 4.5Ohm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTA3N120 Features

a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.1kV voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 4.5Ohm
a 1200V drain to source voltage (Vdss)

IXTA3N120 Applications

There are a lot of IXYS
IXTA3N120 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools