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STF15N65M5

STF15N65M5

STF15N65M5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 340m Ω @ 5.5A, 10V ±25V 816pF @ 100V 22nC @ 10V TO-220-3 Full Pack

SOT-23

STF15N65M5 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 340MOhm
Technology MOSFET (Metal Oxide)
Base Part Number STF15
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 340m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 816pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 44A
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.34000 $3.34
50 $2.69500 $134.75
100 $2.42550 $242.55
500 $1.88650 $943.25
1,000 $1.56310 $1.5631
2,500 $1.45530 $2.9106
5,000 $1.40140 $7.007
STF15N65M5 Product Details

STF15N65M5 Overview


A device's maximum input capacitance is 816pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.Its maximum pulsed drain current is 44A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STF15N65M5 Features


a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 44A.


STF15N65M5 Applications


There are a lot of STMicroelectronics
STF15N65M5 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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