IXTP32P05T

new-10%

Manufacturer part number:IXTP32P05T

Manufacturer:IXYS

Description:MOSFET P-CH 50V 32A TO-220

Case Package:SOT-23

Datasheet:IXTP32P05T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	TrenchP™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Continuous Drain Current (ID)	32A
JEDEC-95 Code	TO-220AB
Drain-source On Resistance-Max	0.039Ohm
Pulsed Drain Current-Max (IDM)	110A
DS Breakdown Voltage-Min	50V
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free