IXTT110N10P

new-10%

Manufacturer part number:IXTT110N10P

Manufacturer:IXYS

Description:Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXTT110N10P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	480W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	110A
Drain-source On Resistance-Max	0.015Ohm
Pulsed Drain Current-Max (IDM)	250A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	ROHS3 Compliant