IXTT69N30P

new-10%

Manufacturer part number:IXTT69N30P

Manufacturer:IXYS

Description:Trans MOSFET N-CH 300V 69A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXTT69N30P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4960pF @ 25V
Current - Continuous Drain (Id) @ 25°C	69A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	69A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.049Ohm
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant