IXTX8N150L

new-10%

Manufacturer part number:IXTX8N150L

Manufacturer:IXYS

Description:MOSFET N-CH 1500V 8A PLUS247

Case Package:SOT-23

Datasheet:IXTX8N150L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.6 Ω @ 4A, 20V
Vgs(th) (Max) @ Id	8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 15V
Drain to Source Voltage (Vdss)	1500V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	±30V
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Pulsed Drain Current-Max (IDM)	20A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free