IXTY12N06TTRL

new-10%

Manufacturer part number:IXTY12N06TTRL

Manufacturer:IXYS

Description:MOSFET N-CH 60V 12A TO-252

Case Package:SOT-23

Datasheet:IXTY12N06TTRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchMV™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	33W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	256pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	12A
JEDEC-95 Code	TO-252AA
Drain-source On Resistance-Max	0.085Ohm
Pulsed Drain Current-Max (IDM)	30A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	20 mJ
RoHS Status	RoHS Compliant