IXUC100N055

new-10%

Manufacturer part number:IXUC100N055

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXUC100N055MOSFET Transistor, N Channel, 100 A, 55 V, 7.7 mohm, 10 V, 4 V

Case Package:SOT-23

Datasheet:IXUC100N055 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS220™
Number of Pins	220
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	35
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	115ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	155 ns
Turn-Off Delay Time	230 ns
Reverse Recovery Time	80 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	4V
JEDEC-95 Code	TO-273AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0077Ohm
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	500 mJ
Isolation Voltage	2.5kV
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant