IXXH100N60B3

new-10%

Manufacturer part number:IXXH100N60B3

Manufacturer:IXYS

Description:IGBT Transistors XPT IGBT B3-Class 600V/210Amp

Case Package:SOT-23

Datasheet:IXXH100N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	830W
Terminal Position	SINGLE
Base Part Number	IXX*N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation	830W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	220A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	92 ns
Test Condition	360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 70A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	143nC
Current - Collector Pulsed (Icm)	480A
Td (on/off) @ 25°C	30ns/120ns
Switching Energy	1.9mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free