IXXH110N65C4

new-10%

Manufacturer part number:IXXH110N65C4

Manufacturer:IXYS

Description:IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT

Case Package:SOT-23

Datasheet:IXXH110N65C4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
Series	GenX4™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	880W
Base Part Number	110N65
Element Configuration	Single
Power Dissipation	880W
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	234A
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.98V
Test Condition	400V, 55A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 110A
IGBT Type	PT
Gate Charge	180nC
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	35ns/143ns
Switching Energy	2.3mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free