STGD6NC60HDT4

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STGD6NC60HDT4

Manufacturer part number:STGD6NC60HDT4

Manufacturer:STMicroelectronics

Description:IGBT 600V 15A 56W DPAK

Case Package:SOT-23

Datasheet:STGD6NC60HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	350.003213mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	56W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	15A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD6
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	50W
Input Type	Standard
Turn On Delay Time	12 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	40 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	15A
Reverse Recovery Time	21 ns
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Max Breakdown Voltage	600V
Turn On Time	17.3 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 3A
Continuous Collector Current	6A
Turn Off Time-Nom (toff)	222 ns
Gate Charge	13.6nC
Current - Collector Pulsed (Icm)	21A
Td (on/off) @ 25°C	12ns/76ns
Switching Energy	20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	2.4mm
Length	6.6mm
Width	6.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free