IXXH30N65B4

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Manufacturer part number:IXXH30N65B4

Manufacturer:IXYS

Description:IGBT Transistors 650V/65A Trench IGBT GenX4 XPT

Case Package:SOT-23

Datasheet:IXXH30N65B4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX4™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	230W
Element Configuration	Single
Power Dissipation	230W
Input Type	Standard
Turn On Delay Time	32 ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	170 ns
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	65A
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.66V
Test Condition	400V, 30A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
IGBT Type	PT
Gate Charge	52nC
Current - Collector Pulsed (Icm)	146A
Td (on/off) @ 25°C	32ns/170ns
Switching Energy	1.55mJ (on), 480μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free