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IXXH30N65B4

IXXH30N65B4

IXXH30N65B4

IXYS

IGBT Transistors 650V/65A Trench IGBT GenX4 XPT

SOT-23

IXXH30N65B4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX4™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 230W
Element Configuration Single
Power Dissipation 230W
Input Type Standard
Turn On Delay Time 32 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 170 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 65A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.66V
Test Condition 400V, 30A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type PT
Gate Charge 52nC
Current - Collector Pulsed (Icm) 146A
Td (on/off) @ 25°C 32ns/170ns
Switching Energy 1.55mJ (on), 480μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.65000 $4.65
10 $4.14800 $41.48
30 $3.73267 $111.9801
120 $3.40092 $408.1104
270 $3.06915 $828.6705
510 $2.75394 $1404.5094
1,020 $2.32260 $2.3226
2,520 $2.21200 $4.424

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