IXXH75N60C3D1

new-10%

Manufacturer part number:IXXH75N60C3D1

Manufacturer:IXYS

Description:IGBT 600V 150A 750W TO247

Case Package:SOT-23

Datasheet:IXXH75N60C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	750W
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	750W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	150A
Reverse Recovery Time	25 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	105 ns
Test Condition	400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 60A
Turn Off Time-Nom (toff)	185 ns
IGBT Type	PT
Gate Charge	107nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	35ns/90ns
Switching Energy	1.6mJ (on), 800μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant