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IKQ75N120CH3XKSA1

IKQ75N120CH3XKSA1

IKQ75N120CH3XKSA1

Infineon Technologies

IKQ75N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKQ75N120CH3XKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 938W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 150A
Turn On Time 81 ns
Test Condition 600V, 75A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 75A
Turn Off Time-Nom (toff) 454 ns
Gate Charge 370nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 34ns/282ns
Switching Energy 6.4mJ (on), 2.8mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.05000 $18.05
10 $16.70800 $167.08
240 $14.33333 $3439.9992
720 $12.90865 $9294.228
IKQ75N120CH3XKSA1 Product Details

IKQ75N120CH3XKSA1 Description

 

IKQ75N120CH3XKSA1 is A Low switching losses IGBT in Highspeed3 technology co packed with soft,fast recovery full current rated anti-parallel. Emitter Controlled diode.


IKQ75N120CH3XKSA1 Applications


·Industrial UPS Charger

·Energy Storage

·Three-level Solar String nverter·Welding

 

IKQ75N120CH3XKSA1  Features


High speed H3 technology offers:

*High efficiency in hard switching and resonant topologies·10usec short circuit withstand time atT=175°C

·Easy paralleling capability due to positive temperature coefficient in Vcesat

·Low EMI

·Low Gate Charge QG

·Very soft, fast recovery full current anti-parallel diode·MaximumjunctiontemperatureTmax=175°℃·Pb-free lead plating:RoHS complian

 

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