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FGPF7N60RUFDTU

FGPF7N60RUFDTU

FGPF7N60RUFDTU

ON Semiconductor

FGPF7N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGPF7N60RUFDTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Voltage - Rated DC 600V
Max Power Dissipation 41W
Current Rating 14A
Element Configuration Single
Power Dissipation 41W
Input Type Standard
Rise Time 60ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 14A
Reverse Recovery Time 65ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Test Condition 300V, 7A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 7A
Gate Charge 24nC
Current - Collector Pulsed (Icm) 21A
Td (on/off) @ 25°C 60ns/60ns
Switching Energy 230μJ (on), 100μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.492611 $2.492611
10 $2.351520 $23.5152
100 $2.218415 $221.8415
500 $2.092844 $1046.422
1000 $1.974382 $1974.382
FGPF7N60RUFDTU Product Details

FGPF7N60RUFDTU Description


The FGPF7N60RUFDTU is an Insulated Gate Bipolar Transistor (IGBT) that provides low conduction and switching losses designed for Motor applications where ruggedness is a required feature.



FGPF7N60RUFDTU Features


High-speed switching

Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A

High input impedance

CO-PAK, IGBT with FRD : trr = 50 ns (typ.)

Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V



FGPF7N60RUFDTU Applications


  • Motor controls and general purpose inverters


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