FGPF7N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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FGPF7N60RUFDTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Voltage - Rated DC
600V
Max Power Dissipation
41W
Current Rating
14A
Element Configuration
Single
Power Dissipation
41W
Input Type
Standard
Rise Time
60ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
14A
Reverse Recovery Time
65ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Test Condition
300V, 7A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 7A
Gate Charge
24nC
Current - Collector Pulsed (Icm)
21A
Td (on/off) @ 25°C
60ns/60ns
Switching Energy
230μJ (on), 100μJ (off)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.492611
$2.492611
10
$2.351520
$23.5152
100
$2.218415
$221.8415
500
$2.092844
$1046.422
1000
$1.974382
$1974.382
FGPF7N60RUFDTU Product Details
FGPF7N60RUFDTU Description
The FGPF7N60RUFDTU is an Insulated Gate Bipolar Transistor (IGBT) that provides low conduction and switching losses designed for Motor applications where ruggedness is a required feature.
FGPF7N60RUFDTU Features
High-speed switching
Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
High input impedance
CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V