Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRG4PC40KPBF

IRG4PC40KPBF

IRG4PC40KPBF

Infineon Technologies

IRG4PC40KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC40KPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 42A
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 42A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Turn On Time 48 ns
Test Condition 480V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 25A
Turn Off Time-Nom (toff) 340 ns
Gate Charge 120nC
Current - Collector Pulsed (Icm) 84A
Td (on/off) @ 25°C 30ns/140ns
Switching Energy 620μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 210ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.42000 $1.42
500 $1.4058 $702.9
1000 $1.3916 $1391.6
1500 $1.3774 $2066.1
2000 $1.3632 $2726.4
2500 $1.349 $3372.5
IRG4PC40KPBF Product Details

IRG4PC40KPBF Description


IRG4PC40KPBF is a 600V insulated gate bipolar transistor. The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4PC40KPBF is in the TO- 247AC package with 160W power dissipation.



IRG4PC40KPBF Features


Short Circuit Rated UItraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10μs @ 125°C, VGE = 15V

Generation 4 IGBT design provides higher efficiency than Generation 3

Industry-standard TO- 247AC package

Reverse Voltage Avalanche Energy: 15mJ

Lead-Free



IRG4PC40KPBF Applications


Automotive 

Hybrid, electric & powertrain systems 

Industrial 

Power delivery 

Enterprise systems 

Enterprise projectors


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News