IRG4PC40KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PC40KPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
ULTRA FAST
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
160W
Current Rating
42A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Rise Time
15ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
42A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.6V
Turn On Time
48 ns
Test Condition
480V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 25A
Turn Off Time-Nom (toff)
340 ns
Gate Charge
120nC
Current - Collector Pulsed (Icm)
84A
Td (on/off) @ 25°C
30ns/140ns
Switching Energy
620μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
210ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.42000
$1.42
500
$1.4058
$702.9
1000
$1.3916
$1391.6
1500
$1.3774
$2066.1
2000
$1.3632
$2726.4
2500
$1.349
$3372.5
IRG4PC40KPBF Product Details
IRG4PC40KPBF Description
IRG4PC40KPBF is a 600V insulated gate bipolar transistor. The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4PC40KPBF is in the TO- 247AC package with 160W power dissipation.
IRG4PC40KPBF Features
Short Circuit Rated UItraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10μs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency than Generation 3