SGW10N60RUFDTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGW10N60RUFDTM Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
SG*10N60
Input Type
Standard
Power - Max
75W
Reverse Recovery Time
60ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
16A
Test Condition
300V, 10A, 20Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 10A
Gate Charge
30nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
15ns/36ns
Switching Energy
141μJ (on), 215μJ (off)
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.865370
$0.86537
10
$0.816387
$8.16387
100
$0.770176
$77.0176
500
$0.726582
$363.291
1000
$0.685455
$685.455
SGW10N60RUFDTM Product Details
SGW10N60RUFDTM Description
The SGW10N60RUFDTM is a Short Circuit Rated IGBT. Insulated Gate Bipolar Transistors (IGBTs) from Fairchild's RUFD series are durable and have low conduction and switching losses. The RUFD series is created for uses where short circuit ruggedness is necessary, such as motor control, uninterrupted power supply (UPS), and general inverters.
SGW10N60RUFDTM Features
Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A