SGP23N60UFTU

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Manufacturer part number:SGP23N60UFTU

Manufacturer:ON Semiconductor

Description:SGP23N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:SGP23N60UFTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 12 hours ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	100W
Current Rating	23A
Base Part Number	SG*23N60
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Input Type	Standard
Turn On Delay Time	17 ns
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	60 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	23A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	55 ns
Test Condition	300V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 12A
Continuous Collector Current	23A
Turn Off Time-Nom (toff)	320 ns
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	17ns/60ns
Switching Energy	115μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.5V
Fall Time-Max (tf)	280ns
Height	9.4mm
Length	10.1mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free