HGTP7N60A4

new-10%

Manufacturer part number:HGTP7N60A4

Manufacturer:ON Semiconductor

Description:HGTP7N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTP7N60A4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	44 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	125W
Current Rating	34A
Base Part Number	HGTP7N60
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	11 ns
Transistor Application	POWER CONTROL
Rise Time	11ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	100 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	34A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	17 ns
Test Condition	390V, 7A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 7A
Turn Off Time-Nom (toff)	205 ns
Gate Charge	37nC
Current - Collector Pulsed (Icm)	56A
Td (on/off) @ 25°C	11ns/100ns
Switching Energy	55μJ (on), 60μJ (off)
Height	9.02mm
Length	10.28mm
Width	4.57mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free