NGTB50N60SWG

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Manufacturer part number:NGTB50N60SWG

Manufacturer:ON Semiconductor

Description:NGTB50N60SWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB50N60SWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 day ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	100A
Reverse Recovery Time	376ns
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 50A
IGBT Type	Trench Field Stop
Gate Charge	135nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	70ns/144ns
Switching Energy	600μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$4.931000	$4.931
10	$4.651887	$46.51887
100	$4.388572	$438.8572
500	$4.140163	$2070.0815
1000	$3.905814	$3905.814

NGTB50N60SWG Descriptipn

The NGTB50N60SWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. This Insulated Gate Bipolar Transistor (IGBT) offers low on state voltage and little switching loss, and it has a durable and economical Field Stop (FS) Trench structure. It performs exceptionally well in demanding switching applications. Applications requiring half-bridge resonance are ideally suited for the IGBT. A soft and fast co-packaged free wheeling diode with a low forward voltage is incorporated into the device.