STGB4M65DF2 Description

The STGB4M65DF2 is a Trench gate field-stop IGBT, M series 650 V, 4 A low loss. This item is an IGBT that was created employing an innovative, exclusive trench gate field-stop structure. The component is an IGBT from the M series, which offers the best performance and efficiency for inverter systems where low-loss and short-circuit functionality are critical. Additionally, safer paralleling operation is produced by the tight parameter distribution and positive VCE(sat) temperature coefficient.

STGB4M65DF2 Features

• Safer paralleling

• Low thermal resistance

• Soft and very fast recovery antiparallel diode

• 6 μs of short-circuit withstand time

• VCE(sat) = 1.6 V (typ.) @ IC = 4 A

• Tight parameter distribution

STGB4M65DF2 Applications

• Motor control

• UPS

• PFC