STGW25H120DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW25H120DF2 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
375W
Base Part Number
STGW25
Element Configuration
Single
Input Type
Standard
Power - Max
375W
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
Reverse Recovery Time
303 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.1V
Test Condition
600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 25A
IGBT Type
Trench Field Stop
Gate Charge
100nC
Current - Collector Pulsed (Icm)
100A
Td (on/off) @ 25°C
29ns/130ns
Switching Energy
600μJ (on), 700μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.88000
$8.88
30
$7.73033
$231.9099
120
$6.79467
$815.3604
510
$5.99775
$3058.8525
1,020
$5.30475
$5.30475
STGW25H120DF2 Product Details
STGW25H120DF2 Description
STGW25H120DF2 is a member of the H series of IGBTs utilizing an advanced proprietary trench gate and field stop structure. Its ability to deliver low conduction and switching losses makes this device able to maximize the efficiency of any frequency converter. Safer paralleling operation can be ensured based on a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution. It is supplied in the TO-247 package to save board space.
STGW25H120DF2 Features
Low conduction and switching losses
A slightly positive VCE(sat) temperature coefficient