IXYH50N65C3D1

new-10%

Manufacturer part number:IXYH50N65C3D1

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXYH50N65C3D1 IGBT Single Transistor, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 Pins

Case Package:SOT-23

Datasheet:IXYH50N65C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	XPT™, GenX3™
Part Status	Active
ECCN Code	EAR99
Max Power Dissipation	600W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Input Type	Standard
Reverse Recovery Time	36ns
Collector Emitter Breakdown Voltage	650V
Current - Collector (Ic) (Max)	132A
Collector Emitter Saturation Voltage	2.1V
Test Condition	400V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 36A
Gate Charge	86nC
Current - Collector Pulsed (Icm)	250A
Td (on/off) @ 25°C	20ns/90ns
Switching Energy	800μJ (on), 800μJ (off)
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant