APTGT200A120G

new-10%

Manufacturer part number:APTGT200A120G

Manufacturer:Microsemi Corporation

Description:POWER MODULE IGBT 1200V 200A SP6

Case Package:SOT-23

Datasheet:APTGT200A120G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	890W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	7
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	890W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	280A
Current - Collector Cutoff (Max)	350μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	14nF
Turn On Time	340 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 200A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	14nF @ 25V
RoHS Status	RoHS Compliant