2N6123 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N6123 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
40W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1.5A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.4V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
2.5MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.855000
$1.855
10
$1.750000
$17.5
100
$1.650943
$165.0943
500
$1.557494
$778.747
1000
$1.469334
$1469.334
2N6123 PBFREE Product Details
2N6123 PBFREE Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 1.5A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.4V @ 1A, 4A.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
2N6123 PBFREE Features
the DC current gain for this device is 20 @ 1.5A 2V the vce saturation(Max) is 1.4V @ 1A, 4A
2N6123 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N6123 PBFREE applications of single BJT transistors.