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2N6123 PBFREE

2N6123 PBFREE

2N6123 PBFREE

Central Semiconductor Corp

2N6123 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N6123 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -65°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 40W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1.5A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 4A
Frequency - Transition 2.5MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.855000 $1.855
10 $1.750000 $17.5
100 $1.650943 $165.0943
500 $1.557494 $778.747
1000 $1.469334 $1469.334
2N6123 PBFREE Product Details

2N6123 PBFREE Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 1.5A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.4V @ 1A, 4A.This device displays a 80V maximum voltage - Collector Emitter Breakdown.

2N6123 PBFREE Features


the DC current gain for this device is 20 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A

2N6123 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N6123 PBFREE applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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