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2SCR573D3TL1

2SCR573D3TL1

2SCR573D3TL1

ROHM Semiconductor

2SCR573D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR573D3TL1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 320MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.143019 $1.143019
10 $1.078320 $10.7832
100 $1.017283 $101.7283
500 $0.959701 $479.8505
1000 $0.905378 $905.378
2SCR573D3TL1 Product Details

2SCR573D3TL1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 100mA 3V.A VCE saturation (Max) of 350mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2SCR573D3TL1 Features


the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 350mV @ 50mA, 1A

2SCR573D3TL1 Applications


There are a lot of ROHM Semiconductor 2SCR573D3TL1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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