2SCR573D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR573D3TL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
10W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
320MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.143019
$1.143019
10
$1.078320
$10.7832
100
$1.017283
$101.7283
500
$0.959701
$479.8505
1000
$0.905378
$905.378
2SCR573D3TL1 Product Details
2SCR573D3TL1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 100mA 3V.A VCE saturation (Max) of 350mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SCR573D3TL1 Features
the DC current gain for this device is 180 @ 100mA 3V the vce saturation(Max) is 350mV @ 50mA, 1A
2SCR573D3TL1 Applications
There are a lot of ROHM Semiconductor 2SCR573D3TL1 applications of single BJT transistors.