S9013-G-AP Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 112 @ 50mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 50mA, 500mA.As a result, the part has a transition frequency of 150MHz.Collector Emitter Breakdown occurs at 25VV - Maximum voltage.

S9013-G-AP Features

the DC current gain for this device is 112 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz

S9013-G-AP Applications

There are a lot of Micro Commercial Co S9013-G-AP applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter