NTHD4508NT1G

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Manufacturer part number:NTHD4508NT1G

Manufacturer:ON Semiconductor

Description:NTHD4508NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTHD4508NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 11 hours ago)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Max Power Dissipation	2.1W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	3.1A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTHD4508N
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.13W
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Rise Time	15ns
Fall Time (Typ)	15 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	4.1A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	10A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.1mm
Length	3.1mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free