SI7997DP-T1-GE3

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SI7997DP-T1-GE3

Manufacturer part number:SI7997DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 30V 60A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7997DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	5.5mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	46W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI7997
Pin Count	8
JESD-30 Code	R-XDSO-C5
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6200pF @ 15V
Current - Continuous Drain (Id) @ 25°C	60A
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	115 ns
Continuous Drain Current (ID)	-20.8A
Threshold Voltage	-2.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	60A
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	100A
Avalanche Energy Rating (Eas)	45 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Height	1.12mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free