TC8220K6-G

new-10%

Manufacturer part number:TC8220K6-G

Manufacturer:Microchip Technology

Description:Two Pair N- And P-channel Enhancement-mode Mosfet

Case Package:SOT-23

Datasheet:TC8220K6-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	3 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	12-VFDFN Exposed Pad
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Qualification Status	Not Qualified
Number of Elements	4
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode	ENHANCEMENT MODE
FET Type	2 N and 2 P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	56pF @ 25V
Drain to Source Voltage (Vdss)	200V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max	7Ohm
DS Breakdown Voltage-Min	200V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant