FDMQ86530L

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FDMQ86530L

Manufacturer part number:FDMQ86530L

Manufacturer:ON Semiconductor

Description:FDMQ86530L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMQ86530L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	12-WDFN Exposed Pad
Number of Pins	12
Weight	242.3mg
Transistor Element Material	SILICON
Manufacturer Package Identifier	511CR
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2010
Series	GreenBridge™ PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Max Power Dissipation	1.9W
Terminal Position	DUAL
Number of Elements	4
Configuration	COMPLEX
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN SOURCE
Turn On Delay Time	8.8 ns
FET Type	4 N-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2295pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	3.8ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.0175Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	50A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	15 pF
Turn On Time-Max (ton)	28ns
Height	800μm
Length	5mm
Width	4.5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free