DMN313DLT-7

new-10%

Manufacturer part number:DMN313DLT-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 0.27A SOT523

Case Package:SOT-23

Datasheet:DMN313DLT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	280mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	4.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36.3pF @ 5V
Current - Continuous Drain (Id) @ 25°C	270mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.5nC @ 4.5V
Rise Time	2.24ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±20V
Fall Time (Typ)	28.2 ns
Turn-Off Delay Time	19.2 ns
Continuous Drain Current (ID)	380mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.21A
Drain-source On Resistance-Max	2Ohm
Height	800μm
Length	1.7mm
Width	850μm
RoHS Status	ROHS3 Compliant