SIS443DN-T1-GE3

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Manufacturer part number:SIS443DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET -40V [email protected] 35A P-Ch G-III

Case Package:SOT-23

Datasheet:SIS443DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	S-PDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	3.7W Ta 52W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4370pF @ 20V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	-13.3A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.035A
Drain to Source Breakdown Voltage	-40V
Max Junction Temperature (Tj)	150°C
Height	1.1684mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant