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2N2907AE4

2N2907AE4

2N2907AE4

Microsemi Corporation

Trans GP BJT PNP 60V 0.6A 3-Pin TO-18

SOT-23

2N2907AE4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Supplier Device Package TO-18
Operating Temperature-65°C~200°C TJ
PackagingBulk
Part StatusActive
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation500mW
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 600mA
RoHS StatusRoHS Compliant
In-Stock:1576 items

Pricing & Ordering

QuantityUnit PriceExt. Price
218$4.95073$1079.25914

About 2N2907AE4

The 2N2907AE4 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans GP BJT PNP 60V 0.6A 3-Pin TO-18.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N2907AE4, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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