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TIP115G

TIP115G

TIP115G

ON Semiconductor

TIP115G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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TIP115G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating 7.4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP11*
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.011333 $3.011333
10 $2.840880 $28.4088
100 $2.680075 $268.0075
500 $2.528373 $1264.1865
1000 $2.385258 $2385.258
TIP115G Product Details

TIP115G Description


The ON Semiconductor TIP115G  is a Medium Power NPN Darlington Bipolar Power Transistor. Its complementary silicon transistor is TIP110G.



TIP115G Features


  • High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc

  • Collector-Emitter Sustaining Voltage @ 30 mA

  • VCEO(sus) = 60 Vdc (Min) TIP110, TIP115

  • Low Collector-Emitter Saturation Voltage

  • VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc

  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors

  • Compact TO-220 AB Package

  • Pb-Free Packages are Available



TIP115G Applications


  • General-purpose amplifier 

  • Low-speed switching


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