BC807-40LWF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC807-40LWF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.02340
$0.234
BC807-40LWF Product Details
BC807-40LWF Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC807-40LWF Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC807-40LWF Applications
There are a lot of Nexperia USA Inc. BC807-40LWF applications of single BJT transistors.