ZXTP2012A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP2012A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Package / Case
TO-92
Number of Pins
3
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-60V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-3.5A
Frequency
120MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3.5A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
-145mV
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
DC Current Gain-Min (hFE)
10
Continuous Collector Current
-3.5A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.716967
$2.716967
10
$2.563177
$25.63177
100
$2.418092
$241.8092
500
$2.281218
$1140.609
1000
$2.152093
$2152.093
ZXTP2012A Product Details
ZXTP2012A Overview
A collector emitter saturation voltage of -145mV allows maximum design flexibility.A -3.5A continuous collector voltage is necessary to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 120MHz.Single BJT transistor is possible to have a collector current as low as 3.5A volts at Single BJT transistors maximum.
ZXTP2012A Features
a collector emitter saturation voltage of -145mV the emitter base voltage is kept at 7V the current rating of this device is -3.5A a transition frequency of 120MHz
ZXTP2012A Applications
There are a lot of Diodes Incorporated ZXTP2012A applications of single BJT transistors.