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2N3764

2N3764

2N3764

Microsemi Corporation

2N3764 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3764 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Mount Through Hole
Package / Case TO-46
Number of Pins 3
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 500mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation 500mW
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1.5A
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 35
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $20.90340 $2090.34
2N3764 Product Details

2N3764 Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Collector current can be as low as 1.5A volts at its maximum.

2N3764 Features


the emitter base voltage is kept at 5V

2N3764 Applications


There are a lot of Microsemi Corporation 2N3764 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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