2N3764 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3764 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 2 weeks ago)
Mount
Through Hole
Package / Case
TO-46
Number of Pins
3
Packaging
Bulk
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Subcategory
Other Transistors
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Number of Elements
1
Polarity
PNP
Configuration
SINGLE
Power Dissipation
500mW
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1.5A
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
DC Current Gain-Min (hFE)
35
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$20.90340
$2090.34
2N3764 Product Details
2N3764 Overview
A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Collector current can be as low as 1.5A volts at its maximum.
2N3764 Features
the emitter base voltage is kept at 5V
2N3764 Applications
There are a lot of Microsemi Corporation 2N3764 applications of single BJT transistors.