2N4029 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N4029 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-18
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Number of Elements
1
Polarity
PNP
Power Dissipation
500mW
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
101
$9.67366
$977.03966
2N4029 Product Details
2N4029 Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Supplier device package TO-18 comes with the product.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 1A volts is possible.
2N4029 Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 1V @ 100mA, 1A the emitter base voltage is kept at 5V the supplier device package of TO-18
2N4029 Applications
There are a lot of Microsemi Corporation 2N4029 applications of single BJT transistors.