2N4029 Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Supplier device package TO-18 comes with the product.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 1A volts is possible.
2N4029 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of TO-18
2N4029 Applications
There are a lot of Microsemi Corporation 2N4029 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting