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FJA4213OTU

FJA4213OTU

FJA4213OTU

ON Semiconductor

FJA4213OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJA4213OTU Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Subcategory Other Transistors
Voltage - Rated DC -230V
Max Power Dissipation130W
Peak Reflow Temperature (Cel) 260
Current Rating-15A
Frequency 30MHz
Number of Elements 1
Element ConfigurationSingle
Power Dissipation130W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage250V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage-400mV
Collector Base Voltage (VCBO) -250V
Emitter Base Voltage (VEBO) -5V
hFE Min 55
Height 19.9mm
Length 15.6mm
Width 4.8mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1547 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.946923$1.946923
10$1.836720$18.3672
100$1.732755$173.2755
500$1.634674$817.337
1000$1.542146$1542.146

FJA4213OTU Product Details

FJA4213OTU Overview


In this device, the DC current gain is 55 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-15A).A transition frequency of 30MHz is present in the part.A maximum collector current of 17A volts is possible.

FJA4213OTU Features


the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -15A
a transition frequency of 30MHz

FJA4213OTU Applications


There are a lot of ON Semiconductor FJA4213OTU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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