2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N5416 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 2 days ago)
Mount
Through Hole
Package / Case
TO-5
Number of Pins
3
Packaging
Bulk
Published
2007
JESD-609 Code
e4
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Gold (Au)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
750mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Number of Elements
1
Polarity
PNP
Configuration
SINGLE
Power Dissipation
750mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
1A
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
DC Current Gain-Min (hFE)
30
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$2.14738
$1073.69
2N5416 Product Details
2N5416 Overview
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.A maximum collector current of 1A volts can be achieved.
2N5416 Features
the emitter base voltage is kept at 6V
2N5416 Applications
There are a lot of Microsemi Corporation 2N5416 applications of single BJT transistors.