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2N5416

2N5416

2N5416

Microsemi Corporation

2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5416 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 days ago)
Mount Through Hole
Package / Case TO-5
Number of Pins 3
Packaging Bulk
Published 2007
JESD-609 Code e4
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Gold (Au)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 750mW
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation 750mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 30
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $2.14738 $1073.69
2N5416 Product Details

2N5416 Overview


Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.A maximum collector current of 1A volts can be achieved.

2N5416 Features


the emitter base voltage is kept at 6V

2N5416 Applications


There are a lot of Microsemi Corporation 2N5416 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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