Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N6649

2N6649

2N6649

Microsemi Corporation

2N6649 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6649 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Package / Case TO-3
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature175°C
Min Operating Temperature -65°C
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Collector Emitter Voltage (VCEO) 60V
JEDEC-95 Code TO-204AA
Transition Frequency 20MHz
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 100
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:94 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$83.29230$8329.23

2N6649 Product Details

2N6649 Overview


A collector emitter saturation voltage of 2V allows maximum design flexibility.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a transition frequency of 20MHz in the part.

2N6649 Features


a collector emitter saturation voltage of 2V
the emitter base voltage is kept at 5V
a transition frequency of 20MHz

2N6649 Applications


There are a lot of Microsemi Corporation 2N6649 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News