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2N6649

  • 2N6649
  • 2N6649

2N6649

2N6649

Microsemi Corporation

2N6649 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6649 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Package / Case TO-3
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity PNP
Element Configuration Single
Collector Emitter Voltage (VCEO) 60V
JEDEC-95 Code TO-204AA
Transition Frequency 20MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 100
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $83.29230 $8329.23
2N6649 Product Details

2N6649 Overview


A collector emitter saturation voltage of 2V allows maximum design flexibility.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a transition frequency of 20MHz in the part.

2N6649 Features


a collector emitter saturation voltage of 2V
the emitter base voltage is kept at 5V
a transition frequency of 20MHz

2N6649 Applications


There are a lot of Microsemi Corporation 2N6649 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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