MSD42WT1G Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 150mA for this device.Single BJT transistor can take a breakdown input voltage of 300V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
MSD42WT1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 150mA
MSD42WT1G Applications
There are a lot of ON Semiconductor MSD42WT1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
