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NJVMJD6039T4G

NJVMJD6039T4G

NJVMJD6039T4G

ON Semiconductor

NJVMJD6039T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD6039T4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1.75W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Polarity NPN
Power - Max 1.75W
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 2A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage80V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19700 items

Pricing & Ordering

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NJVMJD6039T4G Product Details

NJVMJD6039T4G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 2A 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 8mA, 2A.A maximum collector current of 4A volts can be achieved.

NJVMJD6039T4G Features


the DC current gain for this device is 500 @ 2A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A

NJVMJD6039T4G Applications


There are a lot of ON Semiconductor NJVMJD6039T4G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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