NJVMJD6039T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD6039T4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.75W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Polarity
NPN
Power - Max
1.75W
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 2A 4V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage
80V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.34363
$0.68726
NJVMJD6039T4G Product Details
NJVMJD6039T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 2A 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 8mA, 2A.A maximum collector current of 4A volts can be achieved.
NJVMJD6039T4G Features
the DC current gain for this device is 500 @ 2A 4V the vce saturation(Max) is 2.5V @ 8mA, 2A
NJVMJD6039T4G Applications
There are a lot of ON Semiconductor NJVMJD6039T4G applications of single BJT transistors.