NJVMJD6039T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD6039T4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.75W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Polarity
NPN
Power - Max
1.75W
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 2A 4V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Collector Emitter Breakdown Voltage
80V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NJVMJD6039T4G Product Details
NJVMJD6039T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 2A 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 8mA, 2A.A maximum collector current of 4A volts can be achieved.
NJVMJD6039T4G Features
the DC current gain for this device is 500 @ 2A 4V the vce saturation(Max) is 2.5V @ 8mA, 2A
NJVMJD6039T4G Applications
There are a lot of ON Semiconductor NJVMJD6039T4G applications of single BJT transistors.