PBSS4320X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS4320X,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.6W
Terminal Form
FLAT
Frequency
100MHz
Base Part Number
PBSS4320
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.6W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
310mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
100MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.072556
$4.072556
10
$3.842033
$38.42033
100
$3.624560
$362.456
500
$3.419396
$1709.698
1000
$3.225846
$3225.846
PBSS4320X,135 Product Details
PBSS4320X,135 Overview
This device has a DC current gain of 200 @ 2A 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.A breakdown input voltage of 20V volts can be used.A maximum collector current of 3A volts is possible.
PBSS4320X,135 Features
the DC current gain for this device is 200 @ 2A 2V the vce saturation(Max) is 310mV @ 300mA, 3A the emitter base voltage is kept at 5V a transition frequency of 100MHz
PBSS4320X,135 Applications
There are a lot of Nexperia USA Inc. PBSS4320X,135 applications of single BJT transistors.