SCT2H12NZGC11

new-10%

Manufacturer part number:SCT2H12NZGC11

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 1700V 3.7A

Case Package:SOT-23

Datasheet:SCT2H12NZGC11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Number of Pins	3
Operating Temperature	175°C TJ
Packaging	Tube
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	SiCFET (Silicon Carbide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	35W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	ISOLATED
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 1.1A, 18V
Vgs(th) (Max) @ Id	4V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds	184pF @ 800V
Current - Continuous Drain (Id) @ 25°C	3.7A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 18V
Drain to Source Voltage (Vdss)	1700V
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs (Max)	+22V, -6V
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3.7A
Threshold Voltage	2.8V
Gate to Source Voltage (Vgs)	22V
Drain to Source Breakdown Voltage	1.7kV
Pulsed Drain Current-Max (IDM)	9.2A
Max Junction Temperature (Tj)	175°C
Height	26.5mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free