APT11F80B

new-10%

Manufacturer part number:APT11F80B

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 12A TO-247

Case Package:SOT-23

Datasheet:APT11F80B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	35 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH RELIABILITY
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	11A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	337W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2471pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	12A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	1Ohm
Pulsed Drain Current-Max (IDM)	46A
Avalanche Energy Rating (Eas)	524 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free